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Indium gallium phosphide
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31	21 January[removed]Volume 102 Number 3 Applied Physics Letters Add to Reading List Source URL: daedalus.caltech.edu Language: English - Date: 2013-02-07 19:44:45 Semiconductor devices Compound semiconductors Inorganic compounds Multijunction photovoltaic cell Indium gallium arsenide Gallium arsenide Band gap Heterojunction Indium gallium phosphide Chemistry Solar cells Energy conversion
32	APPLIED PHYSICS LETTERS 89, 102106 共2006兲 Direct-bonded GaAs/ InGaAs tandem solar cell Katsuaki Tanabe,a兲 Anna Fontcuberta i Morral,b兲 and Harry A. Atwaterb兲 Thomas J. Watson Laboratory of Applied Physics, Cal Add to Reading List Source URL: daedalus.caltech.edu Language: English - Date: 2006-11-13 12:48:05 Energy conversion Optoelectronics Inorganic compounds Indium gallium arsenide Gallium arsenide Multijunction photovoltaic cell Ohmic contact Indium gallium phosphide Heterojunction Chemistry Solar cells Semiconductor devices
33	APPLIED PHYSICS LETTERS 98, 093502 共2011兲 Wide-band-gap InAlAs solar cell for an alternative multijunction approach Marina S. Leite,1,a兲 Robyn L. Woo,2 William D. Hong,2 Daniel C. Law,2 and Harry A. Atwater1 1 Add to Reading List Source URL: daedalus.caltech.edu Language: English - Date: 2011-03-25 11:58:32 Semiconductor devices Nitrides Inorganic compounds Multijunction photovoltaic cell Indium gallium arsenide Band gap Gallium arsenide Indium gallium phosphide Heterojunction Chemistry Solar cells Energy conversion
34	p-n Junction Heterostructure Device Physics Model of a Four Junction Solar Cell Melissa J. Griggs, Brendan M. Kayes, and Harry A. Atwater California Institute of Technology, Thomas J. Watson, Sr. Laboratories of Applied Add to Reading List Source URL: daedalus.caltech.edu Language: English* - Date: 2006-11-13 12:58:04 Energy conversion Semiconductor devices Multijunction photovoltaic cell Gallium arsenide Indium gallium arsenide Solar panel P–n junction Photovoltaics Indium gallium phosphide Chemistry Solar cells Energy
35	APPLIED PHYSICS LETTERS 91, 012108 共2007兲 High efficiency InGaAs solar cells on Si by InP layer transfer James M. Zahler Aonex Technologies, Pasadena, California 91106 Add to Reading List Source URL: daedalus.caltech.edu Language: English - Date: 2007-09-06 19:39:06 Semiconductor devices Indium gallium arsenide Solar cells Energy conversion Indium phosphide Gallium arsenide Substrate Wafer Thermophotovoltaic Chemistry Semiconductor device fabrication Optoelectronics
36	Gallium Nitride & Related Wide Bandgap Materials and Devices Dr. Edgar J. Martinez Program Manager DARPATech 2000 Add to Reading List Source URL: archive.darpa.mil Language: English - Date: 2000-10-06 09:22:18 Optoelectronics Solar cells Gallium arsenide Gallium nitride DARPA Indium phosphide Indium gallium arsenide Aluminium gallium arsenide Monolithic microwave integrated circuit Chemistry Compound semiconductors Inorganic compounds
37	This cell type is an InGaP/GaAs/Ge on Ge substrate triple junction solar cell (efficiency class 30% advanced). The cell has an improved grid-design and is equipped with an integrated bypass diode, which protects the adja Add to Reading List Source URL: azurspace.de Language: English - Date: 2014-03-14 10:20:41 Energy conversion Diode Indium gallium phosphide Gallium arsenide Chemistry Solar cells Semiconductor devices
38	Good morning everyone, I am Edgar Martinez, Program Manager for the Microsystems Technology Office. Today, it is my pleasure to dedicate the next few minutes talking to you about transformations in future military system Add to Reading List Source URL: archive.darpa.mil Language: English - Date: 2000-10-16 12:09:40 Semiconductor devices Optoelectronics Wide bandgap semiconductors Gallium nitride Gallium arsenide Light-emitting diode Indium phosphide Diode Monolithic microwave integrated circuit Chemistry Compound semiconductors Inorganic compounds
39 $Semiconductor growth / Optoelectronics / Inorganic compounds / Gallium arsenide / Epitaxy / Molecular beam epitaxy / Metalorganic vapour phase epitaxy / Reflection high-energy electron diffraction / Indium phosphide / Chemistry / Thin film deposition / Semiconductor device fabrication$	Pseudomorphic growth and strain relaxation of α-Zn3P2 on GaAs(001) by molecular beam epitaxy Add to Reading List Source URL: daedalus.caltech.edu Language: English - Date: 2013-01-29 19:12:48 Semiconductor growth Optoelectronics Inorganic compounds Gallium arsenide Epitaxy Molecular beam epitaxy Metalorganic vapour phase epitaxy Reflection high-energy electron diffraction Indium phosphide Chemistry Thin film deposition Semiconductor device fabrication
40	STM AND TEM INVESTIGATION OF REACTIVE EPITAXY: HFSIX Add to Reading List Source URL: daedalus.caltech.edu Language: English - Date: 2011-07-12 15:46:31 Semiconductor devices Optoelectronics Indium gallium arsenide Multijunction photovoltaic cell Phosphides Spectrolab Gallium arsenide Photovoltaics Indium phosphide Chemistry Solar cells Energy conversion

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